应用
Tantalum (V) oxide (Ta2O5) has potential applications as part of an environmental barrier coating system for Si3N4-based turbine components. Octadecyl phosphoric acid ester has been found to produce oriented, well-ordered monolayers on a flat tantalum (V) oxide surface, via self-assembly from a heptane/propan-2-ol solution. Tantalum(V) oxide (Ta 2 O 5 ) has been used extensively as an insulating layer in discrete capacitors and shows a high potential for semiconductor applications such as an insulating dielectric in the capacitive element in memory devices such as dynamic random access.

备注
For vacuum deposition

基本信息

MDL
MFCD00011254

EINECS
215-238-2

分子式
Ta₂O₅

分子量
441.89

熔点
1800°

密度
8.2

灵敏度
Ambient temperatures.

形态
3-12mm Sintered Lump

溶解性
Insoluble in water.

Merck
14,9056

安全信息

TSCA
是