应用
Hafnium(IV) oxide is an intermediate. Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices.
备注
For vacuum deposition, Monoclinic
基本信息
MDL
MFCD00003565
EINECS
235-013-2
分子式
HfO2
分子量
210.49
熔点
2774°
密度
9.68
灵敏度
Ambient temperatures.
形态
3-12mm Sintered Lump
溶解性
Insoluble in water.
Merck
14,4588
安全信息
TSCA
是
阿法埃莎
m.cnreagent.com