应用
Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. It is also used in the preparation of hafnium tetrachloride.

备注
Incompatible with strong oxidizing agents.

基本信息

MDL
MFCD00003565

EINECS
235-013-2

分子式
HfO₂

分子量
210.49

熔点
2774°

密度
9.68

灵敏度
Ambient temperatures.

形态
-325 Mesh Powder

溶解性
Insoluble in water.

Merck
14,4588

安全信息

TSCA
是