应用
In spectroscopic analysisGallium(III) oxide is used in vacuum deposition. It is useful for making semiconductor devices, gallium-alumina catalyst, gas sensors, luminescent phosphors and dielectric coatings of solar cells. Used as an evaporated material and sputtering target of 99.999% in dielectric films. It shows potential for developing deep-ultraviolet TCOs (Transparent Conductive Oxides) and transparent electrodes for ultraviolet optoelectronic devices. Recent studies report that gallium oxide can be a strong contender for power electronic devices for example in ultrahigh-voltage power switching applications. Films made of gallium oxide have gained commercial interest owing to their gas sensitive characteristics, and glasses made with gallium oxide are the preferred optical materials for use in advanced technologies.

备注
Reacts violently with Mg on heating and reduces to metallic GaStored in cool, well ventilated area. Container must be tightly closed.

基本信息

MDL
MFCD00011020

EINECS
234-691-7

分子式
Ga₂O₃

分子量
187.44

熔点
1900°

密度
6.44

折射率
1.92

灵敏度
Ambient temperatures.

形态
-50 Mesh Powder

溶解性
Insoluble in water. Soluble in alkalies. Very slightly soluble in hot acids.

Merck
14,4346

安全信息

TSCA
是